RF power, substrate temperature and duration time fixed at 150W,200 °Cand 15 minutes.
2.2. Characterization
The crystallographic information of the deposited films was obtained using X-raydiffraction (XRD) spectra (X’ pert PRO, Phillips. Eindhoven, Netherlands). The surface morphology and roughness of the films was observed by field emission scanning electron microscopy (FE-SEM, Model: J
The GZO, MZO thinfilms were prepared on ZnO pre-sputtered glass substrate using RFSputtering Technique. Morphological, Structural and Electrical properties of deposited films were investigated in comparison with pure ZnO Thinfilmby scanning electronic microscopy (SEM), Atomic force microscopy (AFM), X-ray diffraction (XRD), PL spectra and other electrical analytic method. SEM images showed al
by increasing the accelerating voltage from 5kV to 15kV improved the EDS acquisitionby taking advantage of the high peak-to-background ratio inherent in thin specimens, such as carbon extraction replicas, due to the small interaction volume.
3. Growth of single crystal bulk
3.1 Design
Molecular formula
CuSO₄5H₂O
Melting point
16136℃
Specific gravity
2.284g/ml
film.
High vacuum should be kept in
the chamber not to contain
oxigen
gas which damages
substrate surface
After reaching sufficient
vacuum, argon gas is added
into the chamber to generate
argon cation.
The gas ion have a collisionon
the targeting material affording
to a electron emmition.
The electrons are deposited on
the surface of substrate forming
metalic
process
Fast deposition speed
Cheap process device
1. Partially different thickness
2. Difficult to control the element ratio
3. Hard to deposition the complex material layer
4. Low film quality
3.Material to be evaporated by e-beam
- E-beam dashes against
material
- E-beam transport energy
to the material
- Then evaporation process
is start